Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing
Title: | Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing |
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Authors: | Nishimoto, Naoki, Fujihara, Junko, Yoshino, Katsumi |
Source: | In Physica B: Physics of Condensed Matter 15 May 2018 537:349-354 |
Database: | ScienceDirect |
ISSN: | 09214526 |
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DOI: | 10.1016/j.physb.2018.03.004 |
Published in: | Physica B: Physics of Condensed Matter |
Language: | English |