Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing
| Title: | Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing |
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| Authors: | Nishimoto, Naoki, Fujihara, Junko, Yoshino, Katsumi |
| Source: | In Physica B: Physics of Condensed Matter 15 May 2018 537:349-354 |
| Database: | ScienceDirect |
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