Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing

Bibliographic Details
Title: Defect and interface analyses of non-stoichiometric n-type GaSb thin films grown on Ge(100) substrates by rapid thermal annealing
Authors: Nishimoto, Naoki, Fujihara, Junko, Yoshino, Katsumi
Source: In Physica B: Physics of Condensed Matter 15 May 2018 537:349-354
Database: ScienceDirect
More Details
ISSN:09214526
DOI:10.1016/j.physb.2018.03.004
Published in:Physica B: Physics of Condensed Matter
Language:English