Simulation of Hot-Electron Effects with Multi-band Semiconductor Devices
| Title: | Simulation of Hot-Electron Effects with Multi-band Semiconductor Devices |
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| Authors: | Tatum, Lars P., Sciullo, Madeline, Law, Mark E. |
| Source: | 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on. :327-330 Sep, 2018 |
| Relation: | 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| Database: | IEEE Xplore Digital Library |
| FullText | Text: Availability: 0 CustomLinks: – Url: https://login.libproxy.scu.edu/login?url=https://ieeexplore.ieee.org/document/8551626 Name: EDS - IEEE (s8985755) Category: fullText Text: Check IEEE Xplore for full text MouseOverText: Check IEEE Xplore for full text. A new window will open. – Url: https://resolver.ebsco.com/c/xy5jbn/result?sid=EBSCO:edseee&genre=book&issn=19461577&ISBN=9781538667903&volume=&issue=&date=&spage=327&pages=327-330&title=2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on&atitle=Simulation%20of%20Hot-Electron%20Effects%20with%20Multi-band%20Semiconductor%20Devices&aulast=Tatum%2C%20Lars%20P.&id=DOI:10.1109/SISPAD.2018.8551626 Name: Full Text Finder (for New FTF UI) (s8985755) Category: fullText Text: Find It @ SCU Libraries MouseOverText: Find It @ SCU Libraries |
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| Items | – Name: Title Label: Title Group: Ti Data: Simulation of Hot-Electron Effects with Multi-band Semiconductor Devices – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Tatum%2C+Lars+P%2E%22">Tatum, Lars P.</searchLink><br /><searchLink fieldCode="AR" term="%22Sciullo%2C+Madeline%22">Sciullo, Madeline</searchLink><br /><searchLink fieldCode="AR" term="%22Law%2C+Mark+E%2E%22">Law, Mark E.</searchLink> – Name: TitleSource Label: Source Group: Src Data: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on. :327-330 Sep, 2018 – Name: NoteTitleSource Label: Relation Group: SrcInfo Data: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/SISPAD.2018.8551626 PhysicalDescription: Pagination: PageCount: 4 StartPage: 327 Titles: – TitleFull: Simulation of Hot-Electron Effects with Multi-band Semiconductor Devices Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Tatum, Lars P. – PersonEntity: Name: NameFull: Sciullo, Madeline – PersonEntity: Name: NameFull: Law, Mark E. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Type: published Y: 2018 Identifiers: – Type: isbn-print Value: 9781538667903 – Type: issn-print Value: 19461577 – Type: issn-locals Value: edseee.IEEEConferenc Titles: – TitleFull: 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Simulation of Semiconductor Processes and Devices (SISPAD), 2018 International Conference on Type: main |
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