Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs
Title: | Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs |
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Authors: | Lin, C.-L., Hsiao, P.-H., Yeh, W.-K., Liu, H.-W., Yang, S.-R., Chen, Y.-T., Chen, K.-M., Liao, W.-S. |
Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(11):3639-3644 Nov, 2013 |
Database: | IEEE Xplore Digital Library |
ISSN: | 00189383 15579646 |
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DOI: | 10.1109/TED.2013.2281296 |
Published in: | IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices |