Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs

Bibliographic Details
Title: Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs
Authors: Lin, C.-L., Hsiao, P.-H., Yeh, W.-K., Liu, H.-W., Yang, S.-R., Chen, Y.-T., Chen, K.-M., Liao, W.-S.
Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(11):3639-3644 Nov, 2013
Database: IEEE Xplore Digital Library