Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs
| Title: | Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs |
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| Authors: | Lin, C.-L., Hsiao, P.-H., Yeh, W.-K., Liu, H.-W., Yang, S.-R., Chen, Y.-T., Chen, K.-M., Liao, W.-S. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 60(11):3639-3644 Nov, 2013 |
| Database: | IEEE Xplore Digital Library |
| FullText | Links: – Type: other Text: Availability: 0 CustomLinks: – Url: https://login.libproxy.scu.edu/login?url=https://ieeexplore.ieee.org/document/6612667 Name: EDS - IEEE (s8985755) Category: fullText Text: Check IEEE Xplore for full text MouseOverText: Check IEEE Xplore for full text. A new window will open. – Url: https://resolver.ebsco.com/c/xy5jbn/result?sid=EBSCO:edseee&genre=article&issn=00189383&ISBN=&volume=60&issue=11&date=20131101&spage=3639&pages=3639-3644&title=IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices&atitle=Effects%20of%20Fin%20Width%20on%20Device%20Performance%20and%20Reliability%20of%20Double-Gate%20n-Type%20FinFETs&aulast=Lin%2C%20C.-L.&id=DOI:10.1109/TED.2013.2281296 Name: Full Text Finder (for New FTF UI) (s8985755) Category: fullText Text: Find It @ SCU Libraries MouseOverText: Find It @ SCU Libraries |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TED.2013.2281296 PhysicalDescription: Pagination: PageCount: 6 StartPage: 3639 Titles: – TitleFull: Effects of Fin Width on Device Performance and Reliability of Double-Gate n-Type FinFETs Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Lin, C.-L. – PersonEntity: Name: NameFull: Hsiao, P.-H. – PersonEntity: Name: NameFull: Yeh, W.-K. – PersonEntity: Name: NameFull: Liu, H.-W. – PersonEntity: Name: NameFull: Yang, S.-R. – PersonEntity: Name: NameFull: Chen, Y.-T. – PersonEntity: Name: NameFull: Chen, K.-M. – PersonEntity: Name: NameFull: Liao, W.-S. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Type: published Y: 2013 Identifiers: – Type: issn-print Value: 00189383 – Type: issn-print Value: 15579646 – Type: issn-locals Value: edseee.IEEEJournals Numbering: – Type: volume Value: 60 – Type: issue Value: 11 Titles: – TitleFull: IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices Type: main |
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