Method for Managing the Stress Due to the Strained Nitride Capping Layer in MOS Transistors
| Title: | Method for Managing the Stress Due to the Strained Nitride Capping Layer in MOS Transistors |
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| Authors: | Orain, S., Fiori, V., Villanueva, D., Dray, A., Ortolland, C. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 54(4):814-821 Apr, 2007 |
| Database: | IEEE Xplore Digital Library |
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