Method for Managing the Stress Due to the Strained Nitride Capping Layer in MOS Transistors
| Title: | Method for Managing the Stress Due to the Strained Nitride Capping Layer in MOS Transistors |
|---|---|
| Authors: | Orain, S., Fiori, V., Villanueva, D., Dray, A., Ortolland, C. |
| Source: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 54(4):814-821 Apr, 2007 |
| Database: | IEEE Xplore Digital Library |
| ISSN: | 00189383 15579646 |
|---|---|
| DOI: | 10.1109/TED.2007.892026 |
| Published in: | IEEE Transactions on Electron Devices, Electron Devices, IEEE Transactions on, IEEE Trans. Electron Devices |