Effect of Fluorine Implant Energy on the Performance of P+/N-Junction, Poly-Si Resistor, and PMOS

Bibliographic Details
Title: Effect of Fluorine Implant Energy on the Performance of P+/N-Junction, Poly-Si Resistor, and PMOS
Authors: Link, Lee Sai, Mohamed, Mohamed Fauzi Packeer, Lik, Tan Chan
Source: 2024 IEEE 40th International Electronics Manufacturing Technology (IEMT) Electronics Manufacturing Technology (IEMT),2024 IEEE 40th International. :1-4 Oct, 2024
Relation: 2024 IEEE 40th International Electronics Manufacturing Technology (IEMT)
Database: IEEE Xplore Digital Library