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Erratum: 'Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors' [AIP Advances 7, 035321 (2017)]

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Title: Erratum: 'Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors' [AIP Advances 7, 035321 (2017)]
Authors: Jiadong Yu, Zhibiao Hao, Linsen Li, Lai Wang, Yi Luo, Jian Wang, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li
Source: AIP Advances, Vol 7, Iss 12, Pp 129902-129902-1 (2017)
Publisher Information: AIP Publishing LLC, 2017.
Publication Year: 2017
Collection: LCC:Physics
Subject Terms: Physics, QC1-999
Document Type: article
File Description: electronic resource
Language: English
ISSN: 2158-3226
Relation: https://doaj.org/toc/2158-3226
DOI: 10.1063/1.5018476
Access URL: https://doaj.org/article/a59588c8f9754cdeb460565e0041dd2e
Accession Number: edsdoj.59588c8f9754cdeb460565e0041dd2e
Database: Directory of Open Access Journals
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