| Title: |
Erratum: 'Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors' [AIP Advances 7, 035321 (2017)] |
| Authors: |
Jiadong Yu, Zhibiao Hao, Linsen Li, Lai Wang, Yi Luo, Jian Wang, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li |
| Source: |
AIP Advances, Vol 7, Iss 12, Pp 129902-129902-1 (2017) |
| Publisher Information: |
AIP Publishing LLC, 2017. |
| Publication Year: |
2017 |
| Collection: |
LCC:Physics |
| Subject Terms: |
Physics, QC1-999 |
| Document Type: |
article |
| File Description: |
electronic resource |
| Language: |
English |
| ISSN: |
2158-3226 |
| Relation: |
https://doaj.org/toc/2158-3226 |
| DOI: |
10.1063/1.5018476 |
| Access URL: |
https://doaj.org/article/a59588c8f9754cdeb460565e0041dd2e |
| Accession Number: |
edsdoj.59588c8f9754cdeb460565e0041dd2e |
| Database: |
Directory of Open Access Journals |
