High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz

Bibliographic Details
Title: High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz
Authors: Zhang, Lisen, Gu, Guodong, Liang, Shixiong, Lv, Yuanjie, Song, Xubo, Xu, Peng, Hao, Xiaolin, Bu, Aimin, Feng, Zhihong
Source: IEEE electron device letters. 44(3):376-379
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Database: British Library Document Supply Centre Inside Serials & Conference Proceedings
More Details
ISSN:07413106
Published in:IEEE electron device letters
Language:English