Zhang, L., Gu, G., Liang, S., Lv, Y., Song, X., Xu, P., . . . Feng, Z. (2023). High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz. IEEE electron device letters, 44(3), 376-379.
Chicago Style (17th ed.) CitationZhang, Lisen, Guodong Gu, Shixiong Liang, Yuanjie Lv, Xubo Song, Peng Xu, Xiaolin Hao, Aimin Bu, and Zhihong Feng. "High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz." IEEE Electron Device Letters 44, no. 3 (2023): 376-379.
MLA (8th ed.) CitationZhang, Lisen, et al. "High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz." IEEE Electron Device Letters, vol. 44, no. 3, 2023, pp. 376-379.
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