Single photon emitters in thin GaAsN nanowire tubes grown on Si
| Title: | Single photon emitters in thin GaAsN nanowire tubes grown on Si |
|---|---|
| Authors: | Denis, Nadine, Dede, Didem, Nurmamytov, Timur, Cianci, Salvatore, Santangeli, Francesca, Felici, Marco, Boureau, Victor, Polimeni, Antonio, Rubini, Silvia, Morral, Anna Fontcuberta i, De Luca, Marta |
| Publication Year: | 2024 |
| Collection: | Condensed Matter Physics (Other) Quantum Physics |
| Subject Terms: | Physics - Optics, Condensed Matter - Materials Science, Quantum Physics |
| More Details: | III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electroinic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056. |
| Document Type: | Working Paper |
| Access URL: | http://arxiv.org/abs/2411.03185 |
| Accession Number: | edsarx.2411.03185 |
| Database: | arXiv |
| Description not available. |