Single photon emitters in thin GaAsN nanowire tubes grown on Si

Bibliographic Details
Title:	Single photon emitters in thin GaAsN nanowire tubes grown on Si
Authors:	Denis, Nadine, Dede, Didem, Nurmamytov, Timur, Cianci, Salvatore, Santangeli, Francesca, Felici, Marco, Boureau, Victor, Polimeni, Antonio, Rubini, Silvia, Morral, Anna Fontcuberta i, De Luca, Marta
Publication Year:	2024
Collection:	Condensed Matter Physics (Other) Quantum Physics
Subject Terms:	Physics - Optics, Condensed Matter - Materials Science, Quantum Physics
More Details:	III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electroinic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056.
Document Type:	Working Paper
Access URL:	http://arxiv.org/abs/2411.03185
Accession Number:	edsarx.2411.03185
Database:	arXiv

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Items	– Name: Title Label: Title Group: Ti Data: Single photon emitters in thin GaAsN nanowire tubes grown on Si – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Denis%2C+Nadine%22">Denis, Nadine</searchLink><br /><searchLink fieldCode="AR" term="%22Dede%2C+Didem%22">Dede, Didem</searchLink><br /><searchLink fieldCode="AR" term="%22Nurmamytov%2C+Timur%22">Nurmamytov, Timur</searchLink><br /><searchLink fieldCode="AR" term="%22Cianci%2C+Salvatore%22">Cianci, Salvatore</searchLink><br /><searchLink fieldCode="AR" term="%22Santangeli%2C+Francesca%22">Santangeli, Francesca</searchLink><br /><searchLink fieldCode="AR" term="%22Felici%2C+Marco%22">Felici, Marco</searchLink><br /><searchLink fieldCode="AR" term="%22Boureau%2C+Victor%22">Boureau, Victor</searchLink><br /><searchLink fieldCode="AR" term="%22Polimeni%2C+Antonio%22">Polimeni, Antonio</searchLink><br /><searchLink fieldCode="AR" term="%22Rubini%2C+Silvia%22">Rubini, Silvia</searchLink><br /><searchLink fieldCode="AR" term="%22Morral%2C+Anna+Fontcuberta+i%22">Morral, Anna Fontcuberta i</searchLink><br /><searchLink fieldCode="AR" term="%22De+Luca%2C+Marta%22">De Luca, Marta</searchLink> – Name: DatePubCY Label: Publication Year Group: Date Data: 2024 – Name: Subset Label: Collection Group: HoldingsInfo Data: Condensed Matter<br />Physics (Other)<br />Quantum Physics – Name: Subject Label: Subject Terms Group: Su Data: <searchLink fieldCode="DE" term="%22Physics+-+Optics%22">Physics - Optics</searchLink><br /><searchLink fieldCode="DE" term="%22Condensed+Matter+-+Materials+Science%22">Condensed Matter - Materials Science</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+Physics%22">Quantum Physics</searchLink> – Name: Abstract Label: Description Group: Ab Data: III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electroinic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056. – Name: TypeDocument Label: Document Type Group: TypDoc Data: Working Paper – Name: URL Label: Access URL Group: URL Data: <link linkTarget="URL" linkTerm="http://arxiv.org/abs/2411.03185" linkWindow="_blank">http://arxiv.org/abs/2411.03185</link> – Name: AN Label: Accession Number Group: ID Data: edsarx.2411.03185
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RecordInfo	BibRecord: BibEntity: Subjects: – SubjectFull: Physics - Optics Type: general – SubjectFull: Condensed Matter - Materials Science Type: general – SubjectFull: Quantum Physics Type: general Titles: – TitleFull: Single photon emitters in thin GaAsN nanowire tubes grown on Si Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Denis, Nadine – PersonEntity: Name: NameFull: Dede, Didem – PersonEntity: Name: NameFull: Nurmamytov, Timur – PersonEntity: Name: NameFull: Cianci, Salvatore – PersonEntity: Name: NameFull: Santangeli, Francesca – PersonEntity: Name: NameFull: Felici, Marco – PersonEntity: Name: NameFull: Boureau, Victor – PersonEntity: Name: NameFull: Polimeni, Antonio – PersonEntity: Name: NameFull: Rubini, Silvia – PersonEntity: Name: NameFull: Morral, Anna Fontcuberta i – PersonEntity: Name: NameFull: De Luca, Marta IsPartOfRelationships: – BibEntity: Dates: – D: 05 M: 11 Type: published Y: 2024
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