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Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures

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Title: Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
Authors: Singh, Simrjit, Kim, Kwan-Ho, Jo, Kiyoung, Musavigharavi, Pariasadat, Kim, Bumho, Zheng, Jeffrey, Trainor, Nicholas, Chen, Chen, Redwing, Joan M., Stach, Eric A, Olsson III, Roy H, Jariwala, Deep
Publication Year: 2023
Collection: Condensed Matter
Physics (Other)
Subject Terms: Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
More Details: Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices.
Comment: Manuscript (22 pages and 5 figures), supporting information
Document Type: Working Paper
Access URL: http://arxiv.org/abs/2311.08275
Accession Number: edsarx.2311.08275
Database: arXiv
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  Data: Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
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  Data: <searchLink fieldCode="AR" term="%22Singh%2C+Simrjit%22">Singh, Simrjit</searchLink><br /><searchLink fieldCode="AR" term="%22Kim%2C+Kwan-Ho%22">Kim, Kwan-Ho</searchLink><br /><searchLink fieldCode="AR" term="%22Jo%2C+Kiyoung%22">Jo, Kiyoung</searchLink><br /><searchLink fieldCode="AR" term="%22Musavigharavi%2C+Pariasadat%22">Musavigharavi, Pariasadat</searchLink><br /><searchLink fieldCode="AR" term="%22Kim%2C+Bumho%22">Kim, Bumho</searchLink><br /><searchLink fieldCode="AR" term="%22Zheng%2C+Jeffrey%22">Zheng, Jeffrey</searchLink><br /><searchLink fieldCode="AR" term="%22Trainor%2C+Nicholas%22">Trainor, Nicholas</searchLink><br /><searchLink fieldCode="AR" term="%22Chen%2C+Chen%22">Chen, Chen</searchLink><br /><searchLink fieldCode="AR" term="%22Redwing%2C+Joan+M%2E%22">Redwing, Joan M.</searchLink><br /><searchLink fieldCode="AR" term="%22Stach%2C+Eric+A%22">Stach, Eric A</searchLink><br /><searchLink fieldCode="AR" term="%22Olsson+III%2C+Roy+H%22">Olsson III, Roy H</searchLink><br /><searchLink fieldCode="AR" term="%22Jariwala%2C+Deep%22">Jariwala, Deep</searchLink>
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  Data: 2023
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  Data: Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices.<br />Comment: Manuscript (22 pages and 5 figures), supporting information
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      – SubjectFull: Physics - Applied Physics
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