Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures
| Title: | Non-Volatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures |
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| Authors: | Singh, Simrjit, Kim, Kwan-Ho, Jo, Kiyoung, Musavigharavi, Pariasadat, Kim, Bumho, Zheng, Jeffrey, Trainor, Nicholas, Chen, Chen, Redwing, Joan M., Stach, Eric A, Olsson III, Roy H, Jariwala, Deep |
| Publication Year: | 2023 |
| Collection: | Condensed Matter Physics (Other) |
| Subject Terms: | Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics |
| More Details: | Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that integration of 2D materials with ferroelectrics is a promising strategy; however, its experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and a AlScN ferroelectric dielectric, and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measured a large array of transistors and obtained a maximum valley polarization of ~27% at 80 K with stable retention up to 5400 secs. The enhancement in the valley polarization was ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz. the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization and suggests new design principles for practical valleytronic devices. Comment: Manuscript (22 pages and 5 figures), supporting information |
| Document Type: | Working Paper |
| Access URL: | http://arxiv.org/abs/2311.08275 |
| Accession Number: | edsarx.2311.08275 |
| Database: | arXiv |
| Description not available. |