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Inhibited nonradiative decay at all exciton densities in monolayer semiconductors

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Title: Inhibited nonradiative decay at all exciton densities in monolayer semiconductors
Authors: Kim, Hyungjin, Uddin, Shiekh Zia, Higashitarumizu, Naoki, Rabani, Eran, Javey, Ali
Publication Year: 2021
Collection: Condensed Matter
Physics (Other)
Subject Terms: Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
More Details: Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications. Here, by applying small mechanical strain (< 1%), we circumvent VHS resonance and drastically suppress EEA in monolayer TMDCs, resulting in near-unity PL QY at all exciton densities despite the presence of a high native defect density. Our findings can enable light-emitting devices that retain high efficiency at all brightnesses.
Document Type: Working Paper
DOI: 10.1126/science.abi9193
Access URL: http://arxiv.org/abs/2107.10893
Accession Number: edsarx.2107.10893
Database: arXiv
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  Data: Inhibited nonradiative decay at all exciton densities in monolayer semiconductors
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  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Kim%2C+Hyungjin%22&quot;&gt;Kim, Hyungjin&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Uddin%2C+Shiekh+Zia%22&quot;&gt;Uddin, Shiekh Zia&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Higashitarumizu%2C+Naoki%22&quot;&gt;Higashitarumizu, Naoki&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Rabani%2C+Eran%22&quot;&gt;Rabani, Eran&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Javey%2C+Ali%22&quot;&gt;Javey, Ali&lt;/searchLink&gt;
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  Data: 2021
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  Data: Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications. Here, by applying small mechanical strain (&lt; 1%), we circumvent VHS resonance and drastically suppress EEA in monolayer TMDCs, resulting in near-unity PL QY at all exciton densities despite the presence of a high native defect density. Our findings can enable light-emitting devices that retain high efficiency at all brightnesses.
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      – SubjectFull: Condensed Matter - Materials Science
        Type: general
      – SubjectFull: Condensed Matter - Mesoscale and Nanoscale Physics
        Type: general
      – SubjectFull: Physics - Applied Physics
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            NameFull: Higashitarumizu, Naoki
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            NameFull: Javey, Ali
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