| Title: |
Inhibited nonradiative decay at all exciton densities in monolayer semiconductors |
| Authors: |
Kim, Hyungjin, Uddin, Shiekh Zia, Higashitarumizu, Naoki, Rabani, Eran, Javey, Ali |
| Publication Year: |
2021 |
| Collection: |
Condensed Matter
Physics (Other) |
| Subject Terms: |
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics |
| More Details: |
Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY at low exciton densities, nonradiative exciton-exciton annihilation (EEA) enhanced by van-Hove singularity (VHS) rapidly degrades their PL QY at high exciton densities and limits their utility in practical applications. Here, by applying small mechanical strain (< 1%), we circumvent VHS resonance and drastically suppress EEA in monolayer TMDCs, resulting in near-unity PL QY at all exciton densities despite the presence of a high native defect density. Our findings can enable light-emitting devices that retain high efficiency at all brightnesses. |
| Document Type: |
Working Paper |
| DOI: |
10.1126/science.abi9193 |
| Access URL: |
http://arxiv.org/abs/2107.10893 |
| Accession Number: |
edsarx.2107.10893 |
| Database: |
arXiv |
