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High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP

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Title: High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP
Authors: Okamoto, Yoshihiko, Saigusa, Kazushige, Wada, Taichi, Yamakawa, Youichi, Yamakage, Ai, Sasagawa, Takao, Katayama, Naoyuki, Takatsu, Hiroshi, Kageyama, Hiroshi, Takenaka, Koshi
Source: Phys. Rev. B, 102, 115101(1-6) (2020)
Publication Year: 2020
Collection: Condensed Matter
Subject Terms: Condensed Matter - Materials Science
More Details: We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.
Comment: 6 pages, 3 figures, accepted for publication in Phys. Rev. B
Document Type: Working Paper
DOI: 10.1103/PhysRevB.102.115101
Access URL: http://arxiv.org/abs/2008.06188
Accession Number: edsarx.2008.06188
Database: arXiv
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  Data: High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP
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  Data: <searchLink fieldCode="AR" term="%22Okamoto%2C+Yoshihiko%22">Okamoto, Yoshihiko</searchLink><br /><searchLink fieldCode="AR" term="%22Saigusa%2C+Kazushige%22">Saigusa, Kazushige</searchLink><br /><searchLink fieldCode="AR" term="%22Wada%2C+Taichi%22">Wada, Taichi</searchLink><br /><searchLink fieldCode="AR" term="%22Yamakawa%2C+Youichi%22">Yamakawa, Youichi</searchLink><br /><searchLink fieldCode="AR" term="%22Yamakage%2C+Ai%22">Yamakage, Ai</searchLink><br /><searchLink fieldCode="AR" term="%22Sasagawa%2C+Takao%22">Sasagawa, Takao</searchLink><br /><searchLink fieldCode="AR" term="%22Katayama%2C+Naoyuki%22">Katayama, Naoyuki</searchLink><br /><searchLink fieldCode="AR" term="%22Takatsu%2C+Hiroshi%22">Takatsu, Hiroshi</searchLink><br /><searchLink fieldCode="AR" term="%22Kageyama%2C+Hiroshi%22">Kageyama, Hiroshi</searchLink><br /><searchLink fieldCode="AR" term="%22Takenaka%2C+Koshi%22">Takenaka, Koshi</searchLink>
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  Data: Phys. Rev. B, 102, 115101(1-6) (2020)
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  Data: We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.<br />Comment: 6 pages, 3 figures, accepted for publication in Phys. Rev. B
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