Bibliographic Details
| Title: |
High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP |
| Authors: |
Okamoto, Yoshihiko, Saigusa, Kazushige, Wada, Taichi, Yamakawa, Youichi, Yamakage, Ai, Sasagawa, Takao, Katayama, Naoyuki, Takatsu, Hiroshi, Kageyama, Hiroshi, Takenaka, Koshi |
| Source: |
Phys. Rev. B, 102, 115101(1-6) (2020) |
| Publication Year: |
2020 |
| Collection: |
Condensed Matter |
| Subject Terms: |
Condensed Matter - Materials Science |
| More Details: |
We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.
Comment: 6 pages, 3 figures, accepted for publication in Phys. Rev. B |
| Document Type: |
Working Paper |
| DOI: |
10.1103/PhysRevB.102.115101 |
| Access URL: |
http://arxiv.org/abs/2008.06188 |
| Accession Number: |
edsarx.2008.06188 |
| Database: |
arXiv |
