A gas-phase and surface kinetics model for silicon epitaxial growth with SiH2Cl2 in an RTCVD reactor.
| Title: | A gas-phase and surface kinetics model for silicon epitaxial growth with SiH2Cl2 in an RTCVD reactor. |
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| Authors: | Hierlemann, M., Kersch, A., Werner, C. |
| Source: | Journal of the Electrochemical Society; January 1995, Vol. 142, p259-266, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00134651 |
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| DOI: | 10.1149/1.2043894 |
| Published in: | Journal of the Electrochemical Society |
| Language: | English |