APA (7th ed.) Citation

Hierlemann, M., Kersch, A., & Werner, C. (1995). A gas-phase and surface kinetics model for silicon epitaxial growth with SiH2Cl2 in an RTCVD reactor. Journal of the Electrochemical Society, 142, 259-266. https://doi.org/10.1149/1.2043894

Chicago Style (17th ed.) Citation

Hierlemann, M., A. Kersch, and C. Werner. "A Gas-phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor." Journal of the Electrochemical Society 142 (1995): 259-266. https://doi.org/10.1149/1.2043894.

MLA (8th ed.) Citation

Hierlemann, M., et al. "A Gas-phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor." Journal of the Electrochemical Society, vol. 142, 1995, pp. 259-266, https://doi.org/10.1149/1.2043894.

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