Passive capacitively-coupled electrostatic (CCE) probe method for detecting plasma instabilities in a plasma processing chamber
| Title: | Passive capacitively-coupled electrostatic (CCE) probe method for detecting plasma instabilities in a plasma processing chamber |
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| Patent Number: | 9,153,421 |
| Publication Date: | October 06, 2015 |
| Appl. No: | 13/470187 |
| Application Filed: | May 11, 2012 |
| Abstract: | A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The method includes collecting a set of process data, the process data including a set of induced current signals flowing through a measuring capacitor. The method further includes converting the set of induced current signals into a set of analog voltage signals and converting the set of analog voltage signals into a set of digital signals. The method also includes analyzing the set of digital signals to detect high frequency perturbations, the high frequency perturbations indicating the plasma instability. |
| Inventors: | Booth, Jean-Paul (Essonne, FR); Nagai, Mikio (Fremont, CA, US); Keil, Douglas (Fremont, CA, US) |
| Assignees: | LAM RESEARCH CORPORATION (Fremont, CA, US) |
| Claim: | 1. A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing, comprising: collecting a set of process data including a set of induced current signals, wherein the set of induced current signals corresponds to current induced to flow through a measuring capacitor by plasma within the processing chamber, and wherein a first plate of the measuring capacitor is connected to a plasma-facing sensor and the induced current signals are measured at a second plate of the measuring capacitor; converting said set of induced current signals into a set of analog voltage signals; converting said set of analog voltage signals into a set of digital signals; and analyzing said set of digital signals to detect high frequency perturbations, said high frequency perturbations indicating said plasma instability. |
| Claim: | 2. The method of claim 1 further including comparing rate of change of said current signals to a pre-defined threshold, wherein said plasma instability exists if said rate of change is outside of said pre-defined threshold. |
| Claim: | 3. The method of claim 1 further including collecting voltage measurement data from the plasma-facing sensor to determine potential change during processing. |
| Claim: | 4. The method of claim 3 further including converting said voltage measurement data into a set of digital signals. |
| Claim: | 5. The method of claim 4 farther including analyzing said set of digital signals to detect said high frequency perturbations, wherein said high frequency perturbations indicating said plasma instability. |
| Claim: | 6. The method of claim 5 further including comparing rate of change of said voltage signals to a pre-defined threshold, wherein said plasma instability exists if said rate of change is outside of said pre-defined threshold. |
| Claim: | 7. The method of claim 1 wherein said set of induced current signals is collected when no RF signal is applied to either said measuring capacitor or to a plasma-facing probe that is in electrical communication with a plate of said measuring capacitor. |
| Claim: | 8. The method of claim 1 further including applying a set of periodic radio frequency (RF) pulse trains to said measuring capacitor, wherein said set of induced current signals is collected in between two adjacent RF pulse trains. |
| Claim: | 9. A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing, comprising: collecting a set of process data, said process data including a set of induced current signals flowing through a measuring capacitor; converting said set of induced current signals into a set of analog voltage signals; converting said set of analog voltage signals into a set of digital signals; and analyzing said set of digital signals to detect high frequency perturbations, said high frequency perturbations indicating said plasma instability; comparing rate of change of said current signals to a pre-defined threshold, wherein said plasma instability exists if said rate of change is outside of said pre-defined threshold; and sending a message to a tool controller circuit when said plasma instability is detected, said tool control circuit is configured to apply correction actions to fix said plasma instability. |
| Claim: | 10. A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing, comprising: collecting a set of process data, said process data including a set of induced current signals flowing through a measuring capacitor; converting said set of induced current signals into a set of analog voltage signals; converting said set of analog voltage signals into a set of digital signals; and analyzing said set of digital signals to detect high frequency perturbations, said high frequency perturbations indicating said plasma instability; and applying a set of periodic radio frequency (RF) pulse trains to said measuring capacitor and measuring current decay signals of said measuring capacitor. |
| Claim: | 11. The method of claim 10 further including applying an arc detection algorithm to detect said high frequency perturbations above a pre-determined threshold on said current decay signals. |
| Claim: | 12. The method of claim 11 further including comparing rate of change of said current decay signals to a pre-defined threshold, wherein said plasma instability exists if said rate of change is outside of said pre-defined threshold. |
| Claim: | 13. A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing, comprising: providing a plasma-facing probe; providing a measuring capacitor, whereby a first plate of said measuring capacitor is in electrical communication with said plasma-facing probe; collecting a set of process data, said process data including a set of current signals induced, by plasma within the processing chamber to flow, through said measuring capacitor, wherein said set of induced current signals is passively generated in that said set of induced current signals is not caused by a previous or contemporaneous application of an RF signal from an external RF source to said measuring capacitor; converting said set of induced current signals into a set of analog voltage signals; converting said set of analog voltage signals into a set of digital signals; and analyzing said set of digital signals to detect high frequency perturbations, said high frequency perturbations indicating said plasma instability. |
| Claim: | 14. The method of claim 13 further including comparing rate of change of said current signals to a pre-defined threshold, wherein said plasma instability exists if said rate of change is outside of said pre-defined threshold. |
| Claim: | 15. The method of claim 13 further including collecting voltage measurement data from a plasma-facing sensor to determine potential change during processing. |
| Claim: | 16. The method of claim 15 further including converting said voltage measurement data into a set of digital signals. |
| Claim: | 17. The method of claim 16 further including analyzing said set of digital signals to detect said high frequency perturbations, wherein said high frequency perturbations indicating said plasma instability. |
| Claim: | 18. The method of claim 17 further including comparing rate of change of said voltage signals to a pre-defined threshold, wherein said plasma instability exists if said rate of change is outside of said pre-defined threshold. |
| Claim: | 19. The method of claim 16 further comprising comparing said set of digital signals with a library of digital signal signatures to ascertain whether a plasma instability event exists. |
| Claim: | 20. A method for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing, comprising: providing a plasma-facing probe; providing a measuring capacitor, whereby one plate of said measuring capacitor is in electrical, communication with said plasma-feeing probe; collecting a set of process data, said process data including a set of induced current signals flowing through said measuring capacitor, wherein said set of induced current signals is passively generated in that said set of induced current signals is not caused by a previous or contemporaneous application of an RF signal from an external RF source to said measuring capacitor; converting said set of induced current signals into a set of analog voltage signals; converting said set of analog voltage signals into a set of digital signals; analyzing said set of digital signals to detect high frequency perturbations, said high frequency perturbations indicating said plasma instability; and sending a message to a tool controller circuit when said plasma instability is detected, said tool control circuit is configured to apply correction actions to fix said plasma instability. |
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| Primary Examiner: | Nguyen, Vincent Q |
| Accession Number: | edspgr.09153421 |
| Database: | USPTO Patent Grants |
| Language: | English |
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