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Resist material and electron beam recording resist material

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Title: Resist material and electron beam recording resist material
Patent Number: 7,713,678
Publication Date: May 11, 2010
Appl. No: 11/921327
Application Filed: May 26, 2006
Abstract: The invention mainly intends to provide a resist material that is high in the sensitivity to light and an electron beam and enables to form a clear and fine pattern with less exposure. In order to achieve the object, the invention provides a resist material comprising a metal compound, wherein a metal element constituting the metal compound is a 14th group or 15th group metal element and the metal compound is a stoichiometrically incomplete compound.
Inventors: Hosoda, Yasuo (Saitama, JP)
Assignees: Pioneer Corporation (Tokyo, JP)
Claim: 1. A resist substrate comprising a substrate and a resist film formed on the substrate and made of a resist material, wherein a resist material includes a metal compound, a metal element constituting the metal compound is a 14th group or 15th group metal element, the metal compound is a metal oxide, the metal compound is a stoichiometrically incomplete compound and, when the metal compound is represented by M 1-X O X (M represents a metal element, O represents an oxygen element and X represents a composition ratio of O in a metal compound) and X that is a stoichiometrical composition ratio is assigned to 100%, X in the metal compound is in the range of 75% to 95%; and the substrate is a metal substrate and a heat storage layer is formed between the metal substrate and the resist film.
Claim: 2. A producing method of a pattern forming body comprising steps of: forming a resist film, on a heat storage layer formed on a substrate, made of a resist material that includes a metal compound, a metal element constituting the metal compound is a 14 th group or 15 th group metal element, the metal compound is a metal oxide, the metal compound is a stoichiometrically incomplete compound and, when the metal compound is represented by M 1-X O X (M represents a metal element, O represents an oxygen element and X represents a composition ratio of O in a metal compound) and X that is a stoichimetrical composition ratio is assigned to 100%, X in the metal compound is in the range of 75% to 95%, and irradiating an electron beam to the resist film.
Claim: 3. The resist substrate according to claim 1 wherein an electron beam decelerating layer is formed on the resist film.
Claim: 4. The resist substrate according to claim 1 wherein a metal element constituting the metal compound is Bi.
Current U.S. Class: 4302/701
Patent References Cited: 6951682 October 2005 Zebala
50-000827 January 1975
56-019045 February 1981
56-144536 November 1981
63-0007978 January 1988
03-129349 June 1991
05-212967 August 1993
05-263218 October 1993
09-311439 December 1997
10-097738 April 1998
2001-135563 May 2001
2003-315988 November 2003
2004-504633 February 2004
2004-090610 March 2004
2004-152465 May 2004
2004-348830 December 2004
2005-011489 January 2005
2005-100602 April 2005
2006-004594 January 2006
2006-116948 May 2006
Other References: International Search Report mailed Jun. 27, 2006. cited by other
Primary Examiner: Visconti, Geraldina
Attorney, Agent or Firm: Nixon & Vanderhye P.C.
Accession Number: edspgr.07713678
Database: USPTO Patent Grants
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IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Resist material and electron beam recording resist material
– Name: DocumentID
  Label: Patent Number
  Group: Patent
  Data: 7,713,678
– Name: DateEntry
  Label: Publication Date
  Group: Patent
  Data: May 11, 2010
– Name: DocumentID
  Label: Appl. No
  Group: Patent
  Data: 11/921327
– Name: DateFiled
  Label: Application Filed
  Group: Patent
  Data: May 26, 2006
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The invention mainly intends to provide a resist material that is high in the sensitivity to light and an electron beam and enables to form a clear and fine pattern with less exposure. In order to achieve the object, the invention provides a resist material comprising a metal compound, wherein a metal element constituting the metal compound is a 14th group or 15th group metal element and the metal compound is a stoichiometrically incomplete compound.
– Name: Author
  Label: Inventors
  Group: Patent
  Data: <searchLink fieldCode="ZA" term="%22Hosoda%2C+Yasuo%22">Hosoda, Yasuo</searchLink> (Saitama, JP)
– Name: OtherAuthors
  Label: Assignees
  Group: Patent
  Data: <searchLink fieldCode="ZS" term="%22Pioneer+Corporation%22">Pioneer Corporation</searchLink> (Tokyo, JP)
– Name: Comment
  Label: Claim
  Group: Patent
  Data: 1. A resist substrate comprising a substrate and a resist film formed on the substrate and made of a resist material, wherein a resist material includes a metal compound, a metal element constituting the metal compound is a 14th group or 15th group metal element, the metal compound is a metal oxide, the metal compound is a stoichiometrically incomplete compound and, when the metal compound is represented by M 1-X O X (M represents a metal element, O represents an oxygen element and X represents a composition ratio of O in a metal compound) and X that is a stoichiometrical composition ratio is assigned to 100%, X in the metal compound is in the range of 75% to 95%; and the substrate is a metal substrate and a heat storage layer is formed between the metal substrate and the resist film.
– Name: Comment
  Label: Claim
  Group: Patent
  Data: 2. A producing method of a pattern forming body comprising steps of: forming a resist film, on a heat storage layer formed on a substrate, made of a resist material that includes a metal compound, a metal element constituting the metal compound is a 14 th group or 15 th group metal element, the metal compound is a metal oxide, the metal compound is a stoichiometrically incomplete compound and, when the metal compound is represented by M 1-X O X (M represents a metal element, O represents an oxygen element and X represents a composition ratio of O in a metal compound) and X that is a stoichimetrical composition ratio is assigned to 100%, X in the metal compound is in the range of 75% to 95%, and irradiating an electron beam to the resist film.
– Name: Comment
  Label: Claim
  Group: Patent
  Data: 3. The resist substrate according to claim 1 wherein an electron beam decelerating layer is formed on the resist film.
– Name: Comment
  Label: Claim
  Group: Patent
  Data: 4. The resist substrate according to claim 1 wherein a metal element constituting the metal compound is Bi.
– Name: CodeClass
  Label: Current U.S. Class
  Group: Patent
  Data: 4302/701
– Name: Ref
  Label: Patent References Cited
  Group: Patent
  Data: <searchLink fieldCode="RF" term="%226951682%22">6951682</searchLink> October 2005 Zebala<br /><searchLink fieldCode="RF" term="%2250%2E000827%22">50-000827</searchLink> January 1975<br /><searchLink fieldCode="RF" term="%2256%2E019045%22">56-019045</searchLink> February 1981<br /><searchLink fieldCode="RF" term="%2256%2E144536%22">56-144536</searchLink> November 1981<br /><searchLink fieldCode="RF" term="%2263%2E0007978%22">63-0007978</searchLink> January 1988<br /><searchLink fieldCode="RF" term="%223%2E129349%22">03-129349</searchLink> June 1991<br /><searchLink fieldCode="RF" term="%225%2E212967%22">05-212967</searchLink> August 1993<br /><searchLink fieldCode="RF" term="%225%2E263218%22">05-263218</searchLink> October 1993<br /><searchLink fieldCode="RF" term="%229%2E311439%22">09-311439</searchLink> December 1997<br /><searchLink fieldCode="RF" term="%2210%2E097738%22">10-097738</searchLink> April 1998<br /><searchLink fieldCode="RF" term="%222001%2E135563%22">2001-135563</searchLink> May 2001<br /><searchLink fieldCode="RF" term="%222003%2E315988%22">2003-315988</searchLink> November 2003<br /><searchLink fieldCode="RF" term="%222004%2E504633%22">2004-504633</searchLink> February 2004<br /><searchLink fieldCode="RF" term="%222004%2E090610%22">2004-090610</searchLink> March 2004<br /><searchLink fieldCode="RF" term="%222004%2E152465%22">2004-152465</searchLink> May 2004<br /><searchLink fieldCode="RF" term="%222004%2E348830%22">2004-348830</searchLink> December 2004<br /><searchLink fieldCode="RF" term="%222005%2E011489%22">2005-011489</searchLink> January 2005<br /><searchLink fieldCode="RF" term="%222005%2E100602%22">2005-100602</searchLink> April 2005<br /><searchLink fieldCode="RF" term="%222006%2E004594%22">2006-004594</searchLink> January 2006<br /><searchLink fieldCode="RF" term="%222006%2E116948%22">2006-116948</searchLink> May 2006<br />
– Name: Ref
  Label: Other References
  Group: Patent
  Data: International Search Report mailed Jun. 27, 2006. cited by other
– Name: AuthorEditor
  Label: Primary Examiner
  Group: Patent
  Data: <searchLink fieldCode="ZE" term="%22Visconti%2C+Geraldina%22">Visconti, Geraldina</searchLink>
– Name: AuthorCorporate
  Label: Attorney, Agent or Firm
  Group: Patent
  Data: <searchLink fieldCode="ZG" term="%22Nixon+%26+Vanderhye+P%2EC%2E%22">Nixon & Vanderhye P.C.</searchLink>
– Name: AN
  Label: Accession Number
  Group: ID
  Data: edspgr.07713678
PLink https://login.libproxy.scu.edu/login?url=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edspgr&AN=edspgr.07713678
RecordInfo BibRecord:
  BibEntity:
    Languages:
      – Text: English
    Titles:
      – TitleFull: Resist material and electron beam recording resist material
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Hosoda, Yasuo
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 11
              M: 05
              Text: May 11, 2010
              Type: published
              Y: 2010
ResultId 1