Resist material and electron beam recording resist material
| Title: | Resist material and electron beam recording resist material |
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| Patent Number: | 7,713,678 |
| Publication Date: | May 11, 2010 |
| Appl. No: | 11/921327 |
| Application Filed: | May 26, 2006 |
| Abstract: | The invention mainly intends to provide a resist material that is high in the sensitivity to light and an electron beam and enables to form a clear and fine pattern with less exposure. In order to achieve the object, the invention provides a resist material comprising a metal compound, wherein a metal element constituting the metal compound is a 14th group or 15th group metal element and the metal compound is a stoichiometrically incomplete compound. |
| Inventors: | Hosoda, Yasuo (Saitama, JP) |
| Assignees: | Pioneer Corporation (Tokyo, JP) |
| Claim: | 1. A resist substrate comprising a substrate and a resist film formed on the substrate and made of a resist material, wherein a resist material includes a metal compound, a metal element constituting the metal compound is a 14th group or 15th group metal element, the metal compound is a metal oxide, the metal compound is a stoichiometrically incomplete compound and, when the metal compound is represented by M 1-X O X (M represents a metal element, O represents an oxygen element and X represents a composition ratio of O in a metal compound) and X that is a stoichiometrical composition ratio is assigned to 100%, X in the metal compound is in the range of 75% to 95%; and the substrate is a metal substrate and a heat storage layer is formed between the metal substrate and the resist film. |
| Claim: | 2. A producing method of a pattern forming body comprising steps of: forming a resist film, on a heat storage layer formed on a substrate, made of a resist material that includes a metal compound, a metal element constituting the metal compound is a 14 th group or 15 th group metal element, the metal compound is a metal oxide, the metal compound is a stoichiometrically incomplete compound and, when the metal compound is represented by M 1-X O X (M represents a metal element, O represents an oxygen element and X represents a composition ratio of O in a metal compound) and X that is a stoichimetrical composition ratio is assigned to 100%, X in the metal compound is in the range of 75% to 95%, and irradiating an electron beam to the resist film. |
| Claim: | 3. The resist substrate according to claim 1 wherein an electron beam decelerating layer is formed on the resist film. |
| Claim: | 4. The resist substrate according to claim 1 wherein a metal element constituting the metal compound is Bi. |
| Current U.S. Class: | 4302/701 |
| Patent References Cited: | 6951682 October 2005 Zebala 50-000827 January 1975 56-019045 February 1981 56-144536 November 1981 63-0007978 January 1988 03-129349 June 1991 05-212967 August 1993 05-263218 October 1993 09-311439 December 1997 10-097738 April 1998 2001-135563 May 2001 2003-315988 November 2003 2004-504633 February 2004 2004-090610 March 2004 2004-152465 May 2004 2004-348830 December 2004 2005-011489 January 2005 2005-100602 April 2005 2006-004594 January 2006 2006-116948 May 2006 |
| Other References: | International Search Report mailed Jun. 27, 2006. cited by other |
| Primary Examiner: | Visconti, Geraldina |
| Attorney, Agent or Firm: | Nixon & Vanderhye P.C. |
| Accession Number: | edspgr.07713678 |
| Database: | USPTO Patent Grants |
| Language: | English |
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