Photomask correcting method and manufacturing method of semiconductor device
| Title: | Photomask correcting method and manufacturing method of semiconductor device |
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| Patent Number: | 7,670,755 |
| Publication Date: | March 02, 2010 |
| Appl. No: | 12/216051 |
| Application Filed: | June 27, 2008 |
| Abstract: | A writing pattern data generating method for, in order to form a first photomask for use in a manufacturing method of a semiconductor device which including forming a first resist pattern on a mask film formed on a first film using the first photomask, forming a first mask pattern by etching the mask film, removing the first resist pattern, forming a second resist film on the mask film, forming a second resist pattern on the mask film, forming a second mask pattern by etching the mask film, removing the second resist pattern, and forming a first film pattern by etching the first film, the generating method comprising correcting a first pattern data in accordance with a difference between the first film pattern and the second mask pattern and a difference between the first resist pattern and the first mask pattern. |
| Inventors: | Kanai, Hideki (Yokohama, JP) |
| Assignees: | Kabushiki Kaisha Toshiba (Tokyo, JP) |
| Claim: | 1. A method for manufacturing a semiconductor device, comprising the steps of: preparing a first photomask with a first photomask pattern formed thereon; preparing a second photomask with a second photomask pattern formed thereon; forming a mask material film on a first film; forming a first resist film on the mask material film; forming a first resist pattern by transferring the first photomask pattern to the first resist film and developing the first resist film; forming a first mask pattern by etching the mask material film with the first resist pattern used as a mask; removing the first resist pattern, after forming the first mask pattern; forming a second resist film on the mask material film, after removing the first resist pattern; forming a second resist pattern by transferring the second photomask pattern to the second resist film and developing the second resist film; forming a second mask pattern by etching the mask material film with the second resist pattern used as a mask, the second mask pattern including the first mask pattern; removing the second resist pattern, after forming the second mask pattern; and forming a first film pattern by etching the first film with the second mask pattern used as a mask, after removing the second resist pattern, wherein the first photomask pattern is formed in accordance with a first writing pattern data which is generated by a writing pattern data generating method, in which the first writing pattern data is generated from a first pattern data, and, in order to generate the first writing pattern data, the first pattern data is corrected in accordance with a first formation change difference between the first resist pattern and the first mask pattern formed by etching the mask material film with the first resist pattern used as a mask and a second formation change difference between the first film pattern and the second mask pattern which is formed by etching the mask material film with the second resist pattern used as a mask, the second mask pattern including the first mask pattern. |
| Claim: | 2. A method for manufacturing a semiconductor device according to claim 1 , wherein the first resist pattern has a pattern portion sandwiched by an adjacent pair of openings and the width of the mask material film which is formed under the pattern portion at a time of forming the first mask pattern is made slimmer than that of the pattern portion. |
| Claim: | 3. A method for manufacturing a semiconductor device according to claim 1 , wherein a pattern dimension of the second photomask is corrected by effecting correction based on a formation change difference depending upon a pattern at a time of etching with the second resist pattern used as a mask and on a formation change difference dependent upon a pattern at a time of etching the first film. |
| Claim: | 4. A method for manufacturing a semiconductor device according to claim 1 , wherein the first photomask is comprised of an alternating phase shift mask. |
| Claim: | 5. A method for manufacturing a semiconductor device according to claim 1 , wherein the second photomask is comprised of a half-tone type phase shift mask. |
| Claim: | 6. A method for manufacturing a semiconductor device according to claim 1 , wherein the first film is comprised of a gate electrode material film. |
| Claim: | 7. A method for manufacturing a semiconductor device according to claim 1 , wherein the mask material film includes any of a hard mask material film and anti-reflection material film. |
| Claim: | 8. A method for manufacturing a semiconductor device according to claim 1 , wherein the mask material film is comprised of any of an amorphous silicon film, SiO 2 film, Si 3 N 4 film, SiON film, SiC film, Al 2 O 3 film, carbon film and organic film either singly or in combination. |
| Claim: | 9. A method for manufacturing a semiconductor device comprising the steps of: preparing a first photomask with a first photomask pattern formed thereon; preparing a second photomask with a second photomask pattern formed thereon; forming a mask material film on a first film; forming a first resist film on the mask material film; forming a first resist pattern by transferring the first photomask pattern to the first resist film and developing the first resist film; forming a first mask pattern by etching the mask material film with the first resist pattern used as a mask; removing the first resist pattern, after forming the first mask pattern; forming a second resist film on the mask material film, after the removing the first resist pattern; forming a second resist pattern by transferring the second photomask pattern to the second resist film and developing the second resist film; forming a second mask pattern by etching the mask material film with the use of a mask of the second resist pattern the second mask pattern including the first mask pattern; removing the second resist pattern, after forming the second mask pattern; and forming a first film pattern by etching the first film with the second mask pattern used as a mask, after removing the second resist pattern; wherein the second photomask pattern is formed in accordance with the second writing pattern data which is generated by a writing pattern data generating method, the second writing pattern data is generated from a second pattern data and, in order to generate the second writing pattern data, the second pattern data is corrected in accordance with a first formation change difference between the second resist pattern and the second mask pattern formed by etching the mask material film with the second resist pattern used as a mask and a second formation change difference between the first film pattern and the second mask pattern which is formed by etching the mask material film with the second resist patter used as a mask, the second mask pattern including the first mask pattern. |
| Claim: | 10. A method for manufacturing a semiconductor device according to claim 9 , wherein the first resist pattern has a pattern portion sandwiched by an adjacent pair of openings and the width of the mask material film which is formed under the pattern portion at a time of forming the first mask pattern is made slimmer than that of the pattern portion. |
| Claim: | 11. A method for manufacturing a semiconductor device according to claim 9 , wherein a pattern dimension of the second photomask is corrected by effecting correction based on a formation change difference dependent upon a pattern at a time of etching with the second resist pattern as a mask and on a formation change difference dependent upon a pattern at a time of etching the first film with the mask pattern used as a mask. |
| Claim: | 12. A method for manufacturing a semiconductor device according to claim 9 , wherein the first photomask is comprised of an alternating phase shift mask. |
| Claim: | 13. A method for manufacturing a semiconductor device according to claim 9 , wherein the second photomask is comprised of a half-tone type phase shift mask. |
| Claim: | 14. A method for manufacturing a semiconductor device according to claim 9 , wherein the first film is comprised of a gate electrode material film. |
| Claim: | 15. A method for manufacturing a semiconductor device according to claim 9 , wherein the mask material film includes any of a hard mask material film and anti-reflection film. |
| Claim: | 16. A method for manufacturing a semiconductor device according to claim 9 , wherein the mask material film includes any of an amorphous silicon film, SiO 2 film, Si 3 N 4 film, SiON film, SiC film, Al 2 O 3 film, carbon film and organic film either singly or in combination. |
| Claim: | 17. A method for manufacturing a semiconductor device, in which a pattern formed on a photomask in accordance with a writing pattern data generated by a writing pattern data generating method is transferred to a semiconductor wafer by lithography, comprising: preparing a first photomask with a first photomask pattern formed thereon; preparing a second photomask with a second photomask pattern formed thereon; forming a mask material film on a to-be-processed film; forming a first resist film on the mask material film; forming a first resist pattern by transferring the first photomask pattern to the first resist film and developing the first resist film; forming a first mask pattern by etching the mask material film with the first resist pattern used as a mask; removing the first resist pattern, after forming the first mask pattern; forming a second resist film on the mask material film, after removing the first resist pattern; forming a second resist pattern by transferring the second photomask pattern to the second resist film and developing the second resist film; forming a second mask pattern by etching the mask material film with the second resist pattern used as a mask, the second mask pattern including the first mask pattern; removing the second resist pattern, after forming the second mask pattern; and forming a processed film pattern by etching the to-be-processed film with the second mask pattern used as a mask, after removing the second resist pattern. wherein the writing pattern data is generated by the writing pattern data generating method in which the writing pattern data is generated from a pattern data, and in order to generate the writing pattern data, the pattern data from which the writing pattern data is generated is corrected in accordance with a first formation change difference between the first resist pattern and the first mask pattern formed by etching the mask material film with the first resist pattern used as a mask and a second formation change difference between the to-be-processed film pattern and the second mask patter which is formed by etching the mask material film with the second resist pattern used as a mask, the second mask pattern including the first mask pattern. |
| Claim: | 18. A method for manufacturing a semiconductor device according to claim 17 , wherein the first resist pattern has a pattern portion sandwiched by an adjacent pair of openings and the width of the mask material film which is formed under the pattern portion at a time of forming the first mask pattern is made slimmer than that of the pattern portion. |
| Claim: | 19. A method for manufacturing a semiconductor device according to claim 17 , wherein a patter dimension of the second photomask is corrected by effecting correction based on a formation change difference depending upon a pattern at a time of etching with the second resist pattern used as a mask and on a formation change difference dependent upon a pattern at a time of etching the first film. |
| Claim: | 20. a method for manufacturing a semiconductor device according to claim 17 , wherein the first photomask is comprised of an alternating phase shift mask. |
| Claim: | 21. A method for manufacturing a semiconductor device according to claim 17 , wherein the second photomask is comprised of a half-tone type phase shift mask. |
| Claim: | 22. A method for manufacturing a semiconductor device according to claim 17 , wherein the first film is comprised of a gate electrode material film. |
| Claim: | 23. A method for manufacturing a semiconductor device according to claim 17 , wherein the mask material film includes any of a hard mask material film and anti-reflection material film. |
| Claim: | 24. A method for manufacturing a semiconductor device according to claim 17 , wherein the mask material film is comprised of any of an amorphous silicon film, SiO 2 film, Si 3 N 4 film, SiON film, SiC film, Al 2 O 3 film, carbon film and organic film either singly or in combination. |
| Current U.S. Class: | 430/311 |
| Patent References Cited: | 6787459 September 2004 Moniwa et al. 6821683 November 2004 Toyama et al. 11-102062 April 1999 11-174658 July 1999 2002-311563 October 2002 2002-359352 December 2002 2003-015272 January 2003 |
| Other References: | Notification of Reasons for Rejection from Japanese patent Office mailed Feb. 27, 2007 in Japanese Patent Application No. 2003-161038, and English translation thereof. cited by other |
| Primary Examiner: | Rosasco, Stephen |
| Attorney, Agent or Firm: | Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P. |
| Accession Number: | edspgr.07670755 |
| Database: | USPTO Patent Grants |
| Language: | English |
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