Method of making light emitting diode
| Title: | Method of making light emitting diode |
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| Patent Number: | 7,652,302 |
| Publication Date: | January 26, 2010 |
| Appl. No: | 11/108966 |
| Application Filed: | April 19, 2005 |
| Abstract: | A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure. |
| Inventors: | Tsai, Tzong-Liang (Hsinchu, TW); Wen, Way-Jze (Hsinchu, TW); Chiang, Chang-Han (Hsinchu, TW); Chang, Chih-Sung (Hsinchu, TW) |
| Assignees: | Epistar Corporation (TW) |
| Claim: | 1. A light emitting diode, comprising: a conductive substrate; an adhesive conductive complex layer on the conductive substrate; a reflective layer on the adhesive conductive complex layer; an ohmic contact layer on the reflective layer; an opening passing through the reflective layer and the ohmic contact layer; a light emitting diode epitaxy structure on the ohmic contact layer, and the light emitting diode epitaxy structure including at least one sidewall; and a transparent dielectric layer on the at least one sidewall of the light emitting diode epitaxy structure; wherein the adhesive conductive complex layer fills the opening such that the adhesive conductive complex layer is in direct physical contact with the light emitting diode epitaxy structure. |
| Claim: | 2. The light emitting diode of claim 1 , wherein the transparent dielectric material is selected from a group consisting of SiO 2 , Si 3 N 4 , bisbenzocyclobutene and polyimide. |
| Claim: | 3. The light emitting diode of claim 1 , wherein the adhesive conductive complex layer comprises a first conductive layer comprising a material selected from a group consisting of Cr, Ti, Pt and an alloy thereof. |
| Claim: | 4. The light emitting diode of claim 3 , wherein the adhesive conductive complex layer further comprises a second conductive layer comprising a material selected from a group consisting of Ni, Au and an alloy thereof. |
| Claim: | 5. The light emitting diode of claim 1 , wherein the light emitting diode epitaxy structure comprises: a first doped semiconductor layer; a second doped semiconductor layer; and an active layer between the first doped semiconductor layer and the second doped semiconductor layer. |
| Claim: | 6. The light emitting diode of claim 5 , further comprising a first electrode and a second electrode. |
| Claim: | 7. The light emitting diode of claim 6 , wherein the adhesive conductive complex layer contacts a surface of the second doped semiconductor layer via the opening. |
| Claim: | 8. The light emitting diode of claim 6 , wherein the first electrode is on the first doped semiconductor layer. |
| Claim: | 9. The light emitting diode of claim 5 , wherein the first doped semiconductor layer is an n-type semiconductor layer and the second doped semiconductor is a p-type semiconductor layer. |
| Claim: | 10. The light emitting diode of claim 8 , wherein the position of the first electrode is corresponding to the opening. |
| Claim: | 11. The light emitting diode of claim 8 , wherein the width of the first electrode is substantially equal to the width of the opening. |
| Claim: | 12. A light emitting diode, comprising: a conductive substrate; an adhesive conductive complex layer on the conductive substrate; a reflective layer on the adhesive conductive complex layer; an ohmic contact layer on the reflective layer; an opening passing through the reflective layer and the ohmic contact layer; and a light emitting diode epitaxy structure on the ohmic contact layer; wherein the adhesive conductive complex layer fills the opening such that the adhesive conductive complex layer is in direct physical contact with the light emitting diode epitaxy structure. |
| Claim: | 13. The light emitting diode of claim 12 , wherein the adhesive conductive complex layer comprises a first conductive layer comprising a material selected from a group consisting of Cr, Ti, Pt and an alloy thereof. |
| Claim: | 14. The light emitting diode of claim 13 , wherein the adhesive conductive complex layer further comprises a second conductive layer comprising a material selected from a group consisting of Ni, Au and an alloy thereof. |
| Claim: | 15. The light emitting diode of claim 12 , wherein the light emitting diode epitaxy structure comprises: a first doped semiconductor layer; a second doped semiconductor layer; and an active layer between the first doped semiconductor layer and the second doped semiconductor layer. |
| Claim: | 16. The light emitting diode of claim 15 , further comprising a first electrode and a second electrode. |
| Claim: | 17. The light emitting diode of claim 15 , wherein the adhesive conductive complex layer contacts a surface of the second doped semiconductor layer via the opening. |
| Claim: | 18. The light emitting diode of claim 16 , wherein the first electrode is on the first doped semiconductor layer. |
| Claim: | 19. The light emitting diode of claim 18 , wherein the position of the firest electrode is corresponding to the opening. |
| Claim: | 20. The light emitting diode of claim 18 , wherein the width of the firest electrode is substantially equal to the width of the opening. |
| Claim: | 21. The light emitting diode of claim 15 , wherein the first doped semiconductor layer is an n-type semiconductor layer and the second doped semiconductor is a p-type semiconductor layer. |
| Claim: | 22. The light emitting diode of claim 12 , further comprising a transparent dielectric layer on at least one sidewall of the light emitting diode epitaxy structure. |
| Claim: | 23. The light emitting diode of claim 19 , wherein the transparent dielectric material is selected from a group consisting of SiO 2 , Si 3 N 4 , bisbenzocyclobutene and polyimide. |
| Current U.S. Class: | 257/99 |
| Patent References Cited: | 5665985 September 1997 Iwata 6818531 November 2004 Yoo et al. 7179671 February 2007 Okazaki et al. 2003/0164503 September 2003 Chen 2004/0248377 December 2004 Yoo et al. 2005/0035364 February 2005 Sano et al. 2006/0154389 July 2006 Doan |
| Assistant Examiner: | Gebremariam, Samuel A. |
| Primary Examiner: | Gurley, Lynne A. |
| Attorney, Agent or Firm: | Ingrassia Fisher & Lorenz, P.C. |
| Accession Number: | edspgr.07652302 |
| Database: | USPTO Patent Grants |
| Language: | English |
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