Bibliographic Details
| Title: |
SENSORS INCORPORATING ANTIBODIES AND METHODS OF MAKING AND USING THE SAME |
| Document Number: |
20120122736 |
| Publication Date: |
May 17, 2012 |
| Appl. No: |
13/201181 |
| Application Filed: |
February 11, 2010 |
| Abstract: |
A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention. |
| Inventors: |
Angelo, R. Michael (Berkeley, CA, US); Brown, April S. (Hillsborough, NC, US); Wolter, Scott (Hillsborough, NC, US); Lampert, William V. (Raleigh, NC, US) |
| Assignees: |
DUKE UNIVERSITY (Durham, NC, US) |
| Claim: |
1.-27. (canceled) |
| Claim: |
28. A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material and an antibody contacting the type III-V semiconductor material. |
| Claim: |
29. The sensor of claim 28, wherein the electronic circuit measures an electrical property of the type III-V semiconductor material. |
| Claim: |
30. The sensor of claim 29, wherein the property is at least one of resistivity, capacitance, impedance, and inductance. |
| Claim: |
31. The sensor of claim 30, wherein the property is resistivity. |
| Claim: |
32. The sensor of claim 31, wherein the resistivity is sheet resistivity, and the sheet resistivity is measured in a van der Pauw configuration. |
| Claim: |
33. The sensor of claim 28, wherein the type III-V semiconductor material comprises at least one of indium arsenide (InAs), gallium arsenide (GaAs), gallium nitride (GaN), indium nitride (InN) and a combination thereof. |
| Claim: |
34. The sensor of claim 28, wherein the antibody comprises at least one of an IgG protein, an IgA protein, an IgM protein, an IgD protein, and an IgE protein. |
| Claim: |
35. The sensor of claim 28, wherein the antibody binds a virus, a pathogen, a fungus, a bacterium, a prion, a protein, an amino acid, a nucleic acid, a carbohydrate, a hormone, a chemical compound, or a chemical reaction intermediate. |
| Claim: |
36. The sensor of claim 28, wherein the antibody binds Tumor Necrosis Factor (TNF), Human Serum Albumin (HSA), Interleukin 1β (IL 1β), Interleukin 6 (IL 6), Follicle Stimulating Hormone (FSH), Interferon γ, or Human Chorionic Gonadotropin (HCG). |
| Claim: |
37. The sensor of claim 28, further comprising an additional antibody, the antibody binding a first antigen, the additional antibody binding a second antigen. |
| Claim: |
38. The sensor of claim 28, further comprising a well. |
| Claim: |
39. A sensor array comprising a plurality of sensors of claim 28. |
| Claim: |
40. The sensor array of claim 39, comprising greater than about ten sensors of claim 1. |
| Claim: |
41. The sensor array of claim 39, comprising at least two different antibodies. |
| Claim: |
42. A method of detecting an antigen comprising: making a first measurement of an electrical property of a sensor comprising an antibody contacting a type III-V semiconductor material; contacting the sensor with an analyte that may or may not contain an antigen; and subsequently making a second measurement of the electrical property of the sensor, wherein a difference between the first measurement and the second measurement indicates the presence of an antigen. |
| Claim: |
43. The method of claim 42, wherein the electrical property is at least one of resistivity, capacitance, impedance, and inductance. |
| Claim: |
44. The method of claim 43, wherein the electrical property is resistivity. |
| Claim: |
45. The method of claim 44, wherein the resistivity is sheet resistivity, and the sheet resistivity is measured in a van der Pauw configuration. |
| Claim: |
46. The method of claim 42, wherein the type III-V semiconductor material comprises at least one of indium arsenide (InAs), gallium arsenide (GaAs), gallium nitride (GaN), indium nitride (InN) and a combination thereof. |
| Claim: |
47. The method of claim 42, wherein the antibody comprises at least one of an IgG protein, an IgA protein, an IgM protein, an IgD protein, and an IgE protein. |
| Claim: |
48. The method of claim 42, wherein the analyte comprises at least one of a bodily fluid of an animal, an extract of a plant, an industrial process stream, air, water, a foodstuff, and a combination thereof. |
| Claim: |
49. The method of claim 48, wherein the bodily fluid of an animal is at least one of blood, saliva, urine, mucus, sweat, tears, and a combination thereof. |
| Claim: |
50. The method of claim 42, wherein the antigen is a virus, a pathogen, a fungus, a bacterium, a prion, a protein, an amino acid, a nucleic acid, a carbohydrate, a hormone, a chemical compound, or a chemical reaction intermediate. |
| Claim: |
51. The method of claim 42, wherein the antigen is Tumor Necrosis Factor (TNF), Human Serum Albumin (HSA), Interleukin 1β (IL 1β), Interleukin 6 (IL 6), Follicle Stimulating Hormone (FSH), Interferon γ, or Human Chorionic Gonadotropin (HCG). |
| Claim: |
52. A method of detecting a reaction of an analyte to a stimulus comprising: making a first measurement of an electrical property of a first sensor and a second sensor, wherein the first sensor and the second sensor comprise antibodies contacting a type III-V semiconductor material; contacting the first sensor with an analyte that has not been exposed to the stimulus; contacting the second sensor with an analyte that has been exposed to the stimulus; and subsequently making a second measurement of the electrical property of the first sensor and the second sensor, wherein a difference between the first measurement and the second measurement for the first sensor indicates a response of the first sensor to the analyte that has not been exposed to the stimulus, and a difference between the first measurement and the second measurement for the second sensor indicates a response of the second sensor to the analyte that has been exposed to the stimulus, and wherein a difference between the response of the first sensor and the response of the second sensor indicates a reaction of the analyte to the stimulus. |
| Claim: |
53.-61. (canceled) |
| Claim: |
62. A method of making a sensor incorporating an antibody comprising contacting a type III-V semiconductor material with an antibody and coupling a circuit capable of measuring an electrical property of the type III-V semiconductor material to the type III-V semiconductor material. |
| Claim: |
63.-68. (canceled) |
| Current U.S. Class: |
506/18 |
| Current International Class: |
01; 40; 01; 01; 01; 12; 12; 01 |
| Accession Number: |
edspap.20120122736 |
| Database: |
USPTO Patent Applications |
