Bibliographic Details
| Title: |
METHOD FOR ROUGHENING SUBSTRATE SURFACE AND METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE |
| Document Number: |
20120015470 |
| Publication Date: |
January 19, 2012 |
| Appl. No: |
13/256771 |
| Application Filed: |
August 27, 2009 |
| Abstract: |
A method of roughening a substrate surface includes forming an opening in a protection film formed on a surface of a semiconductor substrate, performing a first etching process using an acid solution by utilizing the protection film as a mask so as to form a first concave under the opening and its vicinity area, performing an etching process by using the protection film as a mask so as to remove an oxide film formed on a surface of the first concave, performing anisotropic etching by using the protection film as a mask so as to form a second concave under the opening and its vicinity area, and removing the protection film. |
| Inventors: |
Nishimura, Kunihiko (Tokyo, JP); Matsuno, Shigeru (Tokyo, JP); Niinobe, Daisuke (Tokyo, JP) |
| Assignees: |
Mitsubishi Electric Corporation (Tokyo, JP) |
| Claim: |
1. A method for roughening a substrate surface comprising: a first step of forming a protection film on a surface of a semiconductor substrate; a second step of forming an opening in the protection film; a third step of isotropically etching a surface of the semiconductor substrate on which the protection film is formed by using the protection film in which the opening is formed as a mask so as to form a first concave under the opening and its vicinity area; a fourth step of etching a surface of the semiconductor substrate on which the protection film is formed by using the protection film in which the opening is formed as a mask so as to remove an oxide film formed on a surface of the first concave formed under the opening and its vicinity area; a fifth step of anisotropically etching a surface of the semiconductor substrate on which the protection film is formed by using the protection film in which the opening is formed as a mask so as to form a second concave under the opening and its vicinity area; and a sixth step of removing the protection film. |
| Claim: |
2. The method for roughening a substrate surface according to claim 1, wherein the semiconductor substrate is made of crystal silicon, the second step is a step of performing laser processing to form an opening in the protection film, isotropic etching at the third step is an etching using an acid solution, an etching process at the fourth step is an etching using an aqueous solution of hydrofluoric acid, and anisotropic etching at the fifth step is an etching using an alkaline solution. |
| Claim: |
3. The method for roughening substrate a surface according to claim 2, wherein the semiconductor substrate is made of single crystal silicon whose crystal surface orientation is <100>. |
| Claim: |
4. The method for roughening a substrate surface according to claim 2, wherein fine holes are arranged on lattice points of a tetragonal lattice in the laser processing process. |
| Claim: |
5. A method for manufacturing a photovoltaic device comprising: a roughening step of roughening one surface side of the semiconductor substrate of a first conductive type by the method for roughening a substrate surface according to claim 1; an impurity-diffusion-layer forming step of diffusing a second conductive-type impurity element on one surface side of the semiconductor substrate to form an impurity diffusion layer; and electrodes forming step of forming electrodes on areas where electrodes are formed on one surface side of the semiconductor substrate and on the other surface side of the semiconductor substrate. |
| Claim: |
6. The method for manufacturing a photovoltaic device according to claim 5, further comprising a first impurity-diffusion-layer forming step of, prior to the roughening step, diffusing the second conductive-type impurity element at a first density on one surface side of the semiconductor substrate to form a first impurity diffusion layer, wherein at the first step, the protection film is formed on the first impurity diffusion layer, at the second step, an opening that reaches the first impurity diffusion layer is formed in the protection film, at the third step, the first impurity diffusion layer and the semiconductor substrate are etched to form the first concave under the opening and its vicinity area, and the impurity-diffusion-layer forming step is a second impurity-diffusion-layer forming step of diffusing the second conductive-type impurity element at a second density, which is lower than the first density, on a surface of the second concave to form a second impurity diffusion layer. |
| Claim: |
7. The method for manufacturing a photovoltaic device according to claim 5, wherein at the second step, the opening is not formed in an area where an electrode is formed on one surface side of the semiconductor substrate. |
| Current U.S. Class: |
438/71 |
| Current International Class: |
01; 01 |
| Accession Number: |
edspap.20120015470 |
| Database: |
USPTO Patent Applications |
