Bibliographic Details
| Title: |
SEMICONDUCTOR LASER DEVICE |
| Document Number: |
20100118908 |
| Publication Date: |
May 13, 2010 |
| Appl. No: |
12/594098 |
| Application Filed: |
February 09, 2009 |
| Abstract: |
A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film (40) in which a first nitride film (41), a first intermediate film including a first oxide film (42) and a second nitride film (43) are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (51), formed on the first insulating film, including a second oxide film (51). |
| Inventors: |
Kameyama, Shingo (Osaka, JP); Murayama, Yoshiki (Osaka, JP) |
| Assignees: |
SANYO ELECTRIC CO., LTD. (Moriguchi-shi, JP) |
| Claim: |
1. A semiconductor laser device comprising: a semiconductor element layer having a light emitting layer; a first cavity facet formed on an end portion on a light emitting side of a region of said semiconductor element layer including said light emitting layer; a first insulating film in which a first nitride film, a first intermediate film including at least one of a first oxide film and a first oxynitride film and a second nitride film are formed on said first cavity facet in this order from the side of said first cavity facet; and a second insulating film, formed on said first insulating film, including at least one of a second oxide film and a second oxynitride film, wherein the thickness t1 of said first nitride film, the thickness t2 of said first intermediate film and the thickness t3 of said second nitride film are set to be t1<λ/(4×n1), t2<λ/(4×n2) and t3<λ/(4×n3) respectively when the wavelength of a laser beam emitted by said light emitting layer is λ and the refractive index of said first nitride film, the average refractive index of said first intermediate film and the refractive index of said second nitride film are n1, n2 and n3 respectively. |
| Claim: |
2. The semiconductor laser device according to claim 1, wherein said first nitride film is in contact with said semiconductor element layer. |
| Claim: |
3. The semiconductor laser device according to claim 1, wherein at least one of said first nitride film and said second nitride film and said first intermediate film contain the same metallic element. |
| Claim: |
4. The semiconductor laser device according to claim 1, wherein said first nitride film and said second nitride film contain at least one of Al and Si respectively. |
| Claim: |
5. The semiconductor laser device according to claim 1, wherein said first oxide film contains at least one element selected from the group consisting of Al, Si, Zr, Ta, Hf and Nb. |
| Claim: |
6. The semiconductor laser device according to claim 1, wherein said first oxynitride film contains at least one of Al and Si. |
| Claim: |
7. The semiconductor laser device according to claim 1, wherein a second intermediate film including at least one of a third oxide film and a third oxynitride film is further formed between said first insulating film and said second insulating film. |
| Claim: |
8. The semiconductor laser device according to claim 7, wherein said second intermediate film is so set that t4<λ/(4×n4) when the average refractive index thereof is n4 and the thickness is t4. |
| Claim: |
9. The semiconductor laser device according to claim 1, wherein said first intermediate film includes both of said first oxide film and said first oxynitride film. |
| Claim: |
10. The semiconductor laser device according to claim 1, wherein said first intermediate film consists of said first oxide film and two said first oxynitride films holding said first oxide film therebetween in the stacking direction. |
| Claim: |
11. The semiconductor laser device according to claim 1, further comprising: a second cavity facet formed on an end portion on a light reflecting side of the region of said semiconductor element layer including said light emitting layer, and a third insulating film in which a third nitride film, a third intermediate film including at least one of a fourth oxide film and a fourth oxynitride film and a fourth nitride film are formed on said second cavity facet in this order from the side of said second cavity facet. |
| Claim: |
12. The semiconductor laser device according to claim 11, wherein the thickness t5 of said third nitride film, the thickness t6 of said third intermediate film and the thickness t7 of said fourth nitride film are set to be t5<λ/(4×n5), t6<λ/(4×n6) and t7<λ/(4×n7) respectively when the refractive index of said third nitride film, the average refractive index of said third intermediate film and the refractive index of said fourth nitride film are n5, n6 and n7 respectively. |
| Claim: |
13. The semiconductor laser device according to claim 11, wherein said third nitride film is in contact with said semiconductor element layer. |
| Claim: |
14. The semiconductor laser device according to claim 11, wherein at least one of said third nitride film and said fourth nitride film and said third intermediate film contain the same metallic element. |
| Claim: |
15. The semiconductor laser device according to claim 11, wherein said third nitride film and said fourth nitride film contain at least one of Al and Si respectively. |
| Claim: |
16. The semiconductor laser device according to claim 11, wherein said fourth oxide film contains at least one element selected from the group consisting of Al, Si, Zr, Ta, Hf and Nb. |
| Claim: |
17. The semiconductor laser device according to claim 11, wherein said fourth oxynitride film contains at least one of Al and Si. |
| Claim: |
18. The semiconductor laser device according to claim 11, further comprising a multilayer reflecting film formed on said third insulating film. |
| Claim: |
19. The semiconductor laser device according to claim 1, wherein said semiconductor element layer is made of a nitride-based semiconductor. |
| Claim: |
20. The semiconductor laser device according to claim 1, wherein said first nitride film, said first intermediate film and said second nitride film have thicknesses in the range of at least 1 nm and not more than 20 nm respectively. |
| Current U.S. Class: |
372/4/901 |
| Current International Class: |
01 |
| Accession Number: |
edspap.20100118908 |
| Database: |
USPTO Patent Applications |
