Bibliographic Details
| Title: |
OXIDE MATERIAL, PATTERNING SUBSTRATE, METHOD OF FORMING A PATTERN, METHOD OF PRODUCING AN IMPRINT TRANSFER MOLD, METHOD OF PRODUCING A RECORDING MEDIUM, IMPRINT TRANSFER MOLD, AND RECORDING MEDIUM |
| Document Number: |
20100003469 |
| Publication Date: |
January 7, 2010 |
| Appl. No: |
12/443039 |
| Application Filed: |
September 28, 2007 |
| Abstract: |
An oxide material (102) is used as masking for patterning by etching which is performed with respect to a substrate or a material laminated on the substrate (101). The oxide material is also used in a multi-step etching which is performed by using a resist (103) formed on the oxide material as a mask. The etching rate of the oxide material for a reaction gas containing an inert gas or hydrogen is higher than the etching rate of the resist for the reaction gas containing an inert gas or hydrogen, while the etching rate of the oxide material for a fluorine-containing gas is lower than the etching rate of the material, which is to be patterned by using the oxide material as a mask, for the fluorine-containing gas. In addition, the oxide material is soluble in a weak acid. |
| Inventors: |
Fujimura, Megumi (Saitama, JP); Hosoda, Yasuo (Saitama, JP) |
| Assignees: |
PIONEER CORPORATION (Tokyo, JP) |
| Claim: |
1-17. (canceled) |
| Claim: |
18. An oxide material, which is used as masking for patterning by etching with respect to a substrate or a material laminated on the substrate and which is used in a multistage etching process performed with a resist that is used as the masking being formed on said oxide material, wherein said oxide material includes bismuth oxide. |
| Claim: |
19. An oxide material, which is used as masking for patterning by etching with respect to a substrate or a material laminated on the substrate, wherein said oxide material includes bismuth oxide. |
| Claim: |
20. A method of forming a pattern, wherein patterning is performed by etching using the oxide material according to claim 18 as the masking. |
| Claim: |
21. The method of forming a pattern according to claim 20, comprising a removing process of removing the oxide material using the weak acid after the patterning is performed by the etching using the oxide material as the masking. |
| Claim: |
22. A method of producing an imprint transfer mold, wherein patterning is performed by the method of forming a pattern according to claim 20. |
| Claim: |
23. A method of producing a recording medium, wherein patterning is performed by the method of forming a pattern according to claim 20. |
| Claim: |
24. The oxide material according to claim 18, wherein 0.4
|
| Claim: |
25. A patterning substrate, wherein a substrate and the oxide material according to claim 18 are laminated. |
| Claim: |
26. A method of forming a pattern, comprising: a resist patterning process of performing patterning with respect to a resist on the patterning substrate according to claim 19 by forming the resist that is used as the masking on said oxide material; a first etching process of performing an etching process on the resist and said oxide material; a second etching process of performing patterning by etching with said oxide material being used as the masking; and a removing process of removing said oxide material using the weak acid. |
| Claim: |
27. The method of forming a pattern according to claim 26, wherein said resist patterning process performs the patterning with respect to the resist using an electron beam. |
| Current U.S. Class: |
4281/951 |
| Current International Class: |
32; 01; 03 |
| Accession Number: |
edspap.20100003469 |
| Database: |
USPTO Patent Applications |
