Bibliographic Details
| Title: |
Structure and method for fabricating a bond pad structure |
| Document Number: |
20060071350 |
| Publication Date: |
April 6, 2006 |
| Appl. No: |
11/284981 |
| Application Filed: |
November 21, 2005 |
| Abstract: |
A structure and method for an improved a bond pad structure. We provide a top wiring layer and a top dielectric (IMD) layer over a semiconductor structure. The buffer dielectric layer is formed over the top wiring layer and the top dielectric (IMD) layer. We form a buffer opening in the buffer dielectric layer exposing at least of portion of the top wiring layer. We form a barrier layer over the buffer dielectric layer, and the top wiring layer in the buffer opening. A conductive buffer layer is formed over the barrier layer. We planarize the conductive buffer layer to form a buffer pad in the buffer opening. We form a passivation layer over the buffer pad and the buffer dielectric layer. We form a bond pad opening in the passivation layer over at least a portion of the buffer pad. We form a bond pad support layer over the buffer pad and the buffer dielectric layer. We form a bond pad layer over the a bond pad support layer. The bond pad layer and the bond pad support layer are patterned to form a bond pad and bond pad support. |
| Inventors: |
Fan, Zhang (Singapore, SG); Chao, Zhang Bei (Singapore, SG); Wuping, Liu (Singapore, SG); Liep, Chok Kho (Singapore, SG); Choo, Hsia Liang (Singapore, SG); Kheng, Lim Yeow (Singapore, SG); Cuthbertson, Alan (Matfen, GB); Boon, Tan Juan (Singapore, SG) |
| Claim: |
1-16. (canceled) |
| Claim: |
17. A bond pad structure comprising: a) a top wiring layer and a top dielectric layer over a semiconductor structure; b) a buffer dielectric layer over said top wiring layer and said top dielectric layer; c) a buffer opening in said buffer dielectric layer exposing at least of portion of said top wiring layer; d) a conductive buffer pad over said buffer dielectric layer and said top wiring layer in said buffer opening; e) forming a passivation layer over said conductive buffer pad and said buffer dielectric layer; f) a bond pad opening in said passivation layer over at least a portion of said buffer pad g) a bond pad over said passivation layer over at least a portion of said buffer pad in at least said bond pad opening. |
| Claim: |
18. The bond pad structure of claim 17 wherein said top wiring layer is comprised of Cu alloy; said top wiring layer is a damascene interconnect. |
| Claim: |
19. The bond pad structure of claim 17 wherein said top dielectric layer is comprised of TEOS oxide and has a thickness between 6750 and 8250 Å. |
| Claim: |
20. The bond pad structure of claim 17 said top dielectric layer is comprised black diamond™ film. |
| Claim: |
21. The bond pad structure of claim 17 said top dielectric layer is comprised an oxide based low k dielectric material with a K equal or less than 3.0. |
| Claim: |
22. The bond pad structure of claim 17 wherein said barrier layer is comprised of Ta or a bilayer comprised of a Cr layer and a Cr—Cu layer; said barrier layer has a thickness between 360 and 440 Å. |
| Claim: |
23. The bond pad structure of claim 17 wherein said conductive buffer layer is comprised of an Aluminum alloy with between a 99.45 and 99.55 wt % Aluminum and between 0.45 and 0.55 wt % copper; said conductive buffer layer has a thickness between 6750 and 8250 Å. |
| Claim: |
24. The bond pad structure of claim 17 wherein said passivation layer is comprised of a three layer structure of (1) lower silicon nitride layer, (2) undoped silicate glass layer and (3) upper silicon nitride layer; and has a thickness between 13500 and 16500 Å. |
| Claim: |
25. The bond pad structure of claim 17 which further comprises a bond pad support layer over at least a portion of said conductive buffer pad; said bonding pad over at least a portion of said bond pad support layer; said bond pad support layer is comprised of a material selected from the group consisting of Ti or TiW, and Cr; and has thickness between 2000 and 6000 Å. |
| Claim: |
26. The bond pad structure of claim 17 wherein said bond pad layer comprised of an Al—Cu alloy and said bond pad layer has a thickness between 6000 and 15000 Å; and said buffer pad underlies the entire bond pad. |
| Claim: |
27. The bond pad structure of claim 17 wherein said buffer pad underlies the entire bond pad; said buffer pad has a larger area than said bond pad by between 10% and 30% of the area of the bonding pad. |
| Claim: |
28. A bond pad structure comprising: a) a top wiring layer and a top dielectric layer over a semiconductor structure; b) a buffer dielectric layer over said top wiring layer and said top dielectric layer; c) a buffer opening in said buffer dielectric layer exposing at least of portion of said top wiring layer; d) a conductive buffer pad over said buffer dielectric layer and said top wiring layer in said buffer opening; e) forming a passivation layer over said conductive buffer pad and said buffer dielectric layer; f) a bond pad opening in said passivation layer over at least a portion of said buffer pad g) a bond pad and bond pad support layer over said passivation layer over at least a portion of said buffer pad. in at least said bond pad opening; said bond pad is electrically connected to said conductive buffer pad. |
| Current U.S. Class: |
257784/000 |
| Current International Class: |
01; 01 |
| Accession Number: |
edspap.20060071350 |
| Database: |
USPTO Patent Applications |
