Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer
| Title: | Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer |
|---|---|
| Authors: | Zhang, Shuo, Liu, Bin, Zhang, Xi, Wen, Congyang, Sun, Haoran, Liu, Xianwen, Yao, Qi, Zi, Xiaorui, Bao, Zongchi, Xiao, Zijin, Zhang, Yunsong, Yuan, Guangcai, Guo, Jian, Ning, Ce, Shi, Dawei, Wang, Feng, Yu, Zhinong |
| Source: | In Materials Science in Semiconductor Processing April 2024 173 |
| Database: | ScienceDirect |
Be the first to leave a comment!