Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer
| Title: | Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer |
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| Authors: | Zhang, Shuo, Liu, Bin, Zhang, Xi, Wen, Congyang, Sun, Haoran, Liu, Xianwen, Yao, Qi, Zi, Xiaorui, Bao, Zongchi, Xiao, Zijin, Zhang, Yunsong, Yuan, Guangcai, Guo, Jian, Ning, Ce, Shi, Dawei, Wang, Feng, Yu, Zhinong |
| Source: | In Materials Science in Semiconductor Processing April 2024 173 |
| Database: | ScienceDirect |
| ISSN: | 13698001 |
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| DOI: | 10.1016/j.mssp.2023.108093 |
| Published in: | Materials Science in Semiconductor Processing |
| Language: | English |