Optimized hydrogen-supplying gate insulator for high-mobility indium oxide TFTs via atomic-level oxygen reactant engineering

Bibliographic Details
Title: Optimized hydrogen-supplying gate insulator for high-mobility indium oxide TFTs via atomic-level oxygen reactant engineering
Authors: Kim, Hwa Young a, Cho, Seong-In a, b, c, Shin, Dong Yeob d, Chung, Kwun-Bum d, Park, Sang-Hee Ko a, Ko, Jong Beom e, ⁎
Source: In Journal of Alloys and Compounds 15 March 2025 1020
Database: ScienceDirect
More Details
ISSN:09258388
DOI:10.1016/j.jallcom.2025.179353
Published in:Journal of Alloys and Compounds
Language:English