Bibliographic Details
| Title: |
Demonstration of device-quality InGaN grown on porous GaN tiles by MBE with an in-plane lattice constant equivalent to fully relaxed In0.12Ga0.88N |
| Authors: |
Wurm, Christian, Collins, Henry, Hatui, Nirupam, Li, Weiyi, Pasayat, Shubhra, Hamwey, Robert, Sun, Kai, Sayed, Islam, Khan, Kamruzzaman, Ahmadi, Elaheh, Keller, Stacia, Mishra, Umesh |
| Source: |
2022 Compound Semiconductor Week (CSW) Compound Semiconductor Week (CSW), 2022. :1-2 Jun, 2022 |
| Relation: |
2022 Compound Semiconductor Week (CSW) |
| Database: |
IEEE Xplore Digital Library |
