Bergamaschi, F. E., Wirth, G. I., Barraud, S., Casse, M., Vinet, M., Faynot, O., & Pavanello, M. A. (2022). Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing. 2022 IEEE Latin American Electron Devices Conference (LAEDC), Electron Devices Conference (LAEDC), 2022 IEEE Latin American, 1-4. https://doi.org/10.1109/LAEDC54796.2022.9908214

Bergamaschi, Flavio E., Gilson I. Wirth, Sylvain Barraud, Mikael Casse, Maud Vinet, Olivier Faynot, and Marcelo A. Pavanello. "Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors Under Substrate Biasing." 2022 IEEE Latin American Electron Devices Conference (LAEDC), Electron Devices Conference (LAEDC), 2022 IEEE Latin American 2022: 1-4. https://doi.org/10.1109/LAEDC54796.2022.9908214.

Bergamaschi, Flavio E., et al. "Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors Under Substrate Biasing." 2022 IEEE Latin American Electron Devices Conference (LAEDC), Electron Devices Conference (LAEDC), 2022 IEEE Latin American, 2022, pp. 1-4, https://doi.org/10.1109/LAEDC54796.2022.9908214.