Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing

Bibliographic Details
Title: Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing
Authors: Bergamaschi, Flavio E., Wirth, Gilson I., Barraud, Sylvain, Casse, Mikael, Vinet, Maud, Faynot, Olivier, Pavanello, Marcelo A.
Source: 2022 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2022 IEEE Latin American. :1-4 Jul, 2022
Relation: 2022 IEEE Latin American Electron Devices Conference (LAEDC)
Database: IEEE Xplore Digital Library