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Modeling of In-chip Current-Temperature Distribution of SiC Power MOSFETs during Fast Switching Events

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Title: Modeling of In-chip Current-Temperature Distribution of SiC Power MOSFETs during Fast Switching Events
Authors: Race, Salvatore, Kovacevic-Badstuebner, Ivana, Stark, Roger, Tsibizov, Alexander, Popescu, Dan, Popescu, Bogdan, Grossner, Ulrike
Source: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :265-268 May, 2022
Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Database: IEEE Xplore Digital Library
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  Data: Modeling of In-chip Current-Temperature Distribution of SiC Power MOSFETs during Fast Switching Events
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  Data: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :265-268 May, 2022
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  Data: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1109/ISPSD49238.2022.9813610
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        PageCount: 4
        StartPage: 265
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      – TitleFull: Modeling of In-chip Current-Temperature Distribution of SiC Power MOSFETs during Fast Switching Events
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      – PersonEntity:
          Name:
            NameFull: Race, Salvatore
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            NameFull: Kovacevic-Badstuebner, Ivana
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            NameFull: Stark, Roger
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            NameFull: Tsibizov, Alexander
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            NameFull: Popescu, Dan
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            NameFull: Popescu, Bogdan
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            NameFull: Grossner, Ulrike
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          Dates:
            – D: 22
              M: 05
              Type: published
              Y: 2022
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            – TitleFull: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on
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