Bibliographic Details
| Title: |
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface |
| Authors: |
Kim, Moosung, Yun, Sung Won, Park, Jungjune, Park, Hyun Kook, Lee, Jungyu, Kim, Yeong Seon, Na, Daehoon, Choi, Sara, Song, Youngsun, Lee, Jonghoon, Yoon, Hyunjun, Lee, Kangbin, Jeong, Byunghoon, Kim, Sanglok, Park, Junhong, Lee, Cheon An, Lee, Jaeyun, Lee, Jisang, Chun, Jin Young, Jang, Joonsuc, Yang, Younghwi, Moon, Seung Hyun, Choi, Myunghoon, Kim, Wontae, Kim, Jungsoo, Yoon, Seokmin, Kwak, Pansuk, Lee, Myunghun, Song, Raehyun, Kim, Sunghoon, Yoon, Chiweon, Kang, Dongku, Lee, Jin-Yub, Song, Jaihyuk |
| Source: |
2022 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2022 IEEE International. 65:136-137 Feb, 2022 |
| Relation: |
2022 IEEE International Solid-State Circuits Conference (ISSCC) |
| Database: |
IEEE Xplore Digital Library |
