Bibliographic Details
| Title: |
TCAD Comprehensive Silicon Strain Model Using Finite Element Quasi-Fermi Discretization |
| Authors: |
Weingartner, Thomas, Law, Mark E., Green, Keith, Thomas, Andrew, Johnson, Henry, Leger, Polina |
| Source: |
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2021 International Conference on. :242-246 Sep, 2021 |
| Relation: |
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
| Database: |
IEEE Xplore Digital Library |
