First Demonstration of Interface-Enhanced SAF Enabling 400°C-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels

Bibliographic Details
Title: First Demonstration of Interface-Enhanced SAF Enabling 400°C-Robust 42 nm p-SOT-MTJ Cells with STT-Assisted Field-Free Switching and Composite Channels
Authors: Tsou, Ya-Jui, Li, Kai-Shin, Shieh, Jia-Min, Chen, Wei-Jen, Chen, Hsiu-Chih, Chen, Yi-Ju, Hsu, Cho-Lun, Huang, Yao-Min, Hsueh, Fu-Kuo, Huang, Wen-Hsien, Yeh, Wen-Kuan, Shih, Huan-Chi, Liu, Pan-Chun, Liu, C. W., Yen, Yu-Shen, Lai, Chih-Huang, Wei, Jeng-Hua, Tang, Denny D., Sun, Jack Yuan-Chen
Source: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021
Relation: 2021 Symposium on VLSI Technology
Database: IEEE Xplore Digital Library