An Asymmetrically Doped Vertical Si Biristor With Sub-1-V Operation

Bibliographic Details
Title: An Asymmetrically Doped Vertical Si Biristor With Sub-1-V Operation
Authors: Das, B., Schulze, J., Ganguly, U.
Source: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(8):3728-3733 Aug, 2021
Database: IEEE Xplore Digital Library