Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?

Bibliographic Details
Title: Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?
Authors: Pilotto, A., Driussi, F., Esseni, D., Selmi, L., Antonelli, M., Arfelli, F., Biasiol, G., Carrato, S., Cautero, G., De Angelis, D., Menk, R.H., Nichetti, C., Steinhartova, T., Palestri, P.
Source: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :1-4 Sep, 2020
Relation: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Database: IEEE Xplore Digital Library