Germanium Source Double-Gate Tunnel Field Effect Transistor with Metal Drain: Design & Simulation

Bibliographic Details
Title: Germanium Source Double-Gate Tunnel Field Effect Transistor with Metal Drain: Design & Simulation
Authors: Khan, Anam, Loan, Sajad A., Alharbi, Abdullah G.
Source: 2020 IEEE International Conference on Semiconductor Electronics (ICSE) Semiconductor Electronics (ICSE), 2020 IEEE International Conference on. :21-24 Jul, 2020
Relation: 2020 IEEE International Conference on Semiconductor Electronics (ICSE)
Database: IEEE Xplore Digital Library