Bibliographic Details
| Title: |
5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications |
| Authors: |
Yeap, Geoffrey, Lin, S. S., Chen, Y. M., Shang, H. L., Wang, P. W., Lin, H. C., Peng, Y. C., Sheu, J. Y., Wang, M., Chen, X., Yang, B. R., Lin, C. P., Yang, F. C., Leung, Y. K., Lin, D. W., Chen, C. P., Yu, K. F., Chen, D. H., Chang, C. Y., Chen, H. K., Hung, P., Hou, C. S., Cheng, Y. K., Chang, J., Yuan, L., Lin, C. K., Chen, C. C., Yeo, Y. C., Tsai, M. H., Lin, H. T., Chui, C. O., Huang, K. B., Chang, W., Lin, H. J., Chen, K. W., Chen, R., Sun, S. H., Fu, Q., Yang, H. T., Chiang, H. T., Yeh, C. C., Lee, T. L., Wang, C. H., Shue, S. L., Wu, C. W., Lu, R., Lin, W. R., Wu, J., Lai, F., Wu, Y. H., Tien, B. Z., Huang, Y. C., Lu, L. C., He, Jun, Ku, Y., Lin, J., Cao, M., Chang, T. S., Jang, S. M. |
| Source: |
2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :36.7.1-36.7.4 Dec, 2019 |
| Relation: |
2019 IEEE International Electron Devices Meeting (IEDM) |
| Database: |
IEEE Xplore Digital Library |
