Bibliographic Details
| Title: |
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications |
| Authors: |
Carissimi, M., Zurla, R., Auricchio, C., Calvetti, E., Capecchi, L., Croce, L., Zanchi, S., Rana, V., Mishra, P., Mukherjee, R., Tyagi, V., Disegni, F., Manfre, D., Torti, C., Gallinari, D., Rossi, S., Gambero, A., Brambilla, D., Zuliani, P., Cabrini, A., Torelli, G., Pasotti, M. |
| Source: |
ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC) Solid State Circuits Conference (ESSCIRC), ESSCIRC 2019 - IEEE 45th European. :135-138 Sep, 2019 |
| Relation: |
ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC) |
| Database: |
IEEE Xplore Digital Library |
