Kim, K., Hwang, S., Yu, H., Choi, Y., Yoon, Y., Bolotnikov, A., & James, R. (2018). Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity. IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci., 65(8), 2333. https://doi.org/10.1109/TNS.2018.2856805
Chicago Style (17th ed.) CitationKim, K., S. Hwang, H. Yu, Y. Choi, Y. Yoon, A.E Bolotnikov, and R.B James. "Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity." IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci. 65, no. 8 (2018): 2333. https://doi.org/10.1109/TNS.2018.2856805.
MLA (8th ed.) CitationKim, K., et al. "Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity." IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci., vol. 65, no. 8, 2018, p. 2333, https://doi.org/10.1109/TNS.2018.2856805.
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