APA (7th ed.) Citation

Kim, K., Hwang, S., Yu, H., Choi, Y., Yoon, Y., Bolotnikov, A., & James, R. (2018). Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity. IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci., 65(8), 2333. https://doi.org/10.1109/TNS.2018.2856805

Chicago Style (17th ed.) Citation

Kim, K., S. Hwang, H. Yu, Y. Choi, Y. Yoon, A.E Bolotnikov, and R.B James. "Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity." IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci. 65, no. 8 (2018): 2333. https://doi.org/10.1109/TNS.2018.2856805.

MLA (8th ed.) Citation

Kim, K., et al. "Two-Step Annealing to Remove Te Secondary-Phase Defects in CdZnTe While Preserving the High Electrical Resistivity." IEEE Transactions on Nuclear Science, Nuclear Science, IEEE Transactions on, IEEE Trans. Nucl. Sci., vol. 65, no. 8, 2018, p. 2333, https://doi.org/10.1109/TNS.2018.2856805.

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