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Occurrence and solution to overcome 1st RESET resistance pinning effect in Ti/HfOx based RRAM for low power nonvolatile memory applications

Bibliographic Details
Title: Occurrence and solution to overcome 1st RESET resistance pinning effect in Ti/HfOx based RRAM for low power nonvolatile memory applications
Authors: Rahaman, Sk. Ziaur, Heng-Yuan Lee, Yu-De Lin, Chien-Hua Hsu, Kan-Hsueh Tsai, Wei-Su Chen, Chen, Yu-Sheng, Pang-Shiu Chen, Pei-Hua Wang
Source: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2017 International Symposium on. :1-2 Apr, 2017
Relation: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Database: IEEE Xplore Digital Library
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ISBN:9781509058051
DOI:10.1109/VLSI-TSA.2017.7942471
Published in:2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), VLSI Technology, Systems and Application (VLSI-TSA), 2017 International Symposium on